| PART |
Description |
Maker |
| TC55V16100FT-10 TC55V16100FT-12 TC55V16100FT-15 |
1,048,576-WORD BY 16-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC83220-0009 |
Single-Chip CMOS LSI for FL (fluorescent) Calculator with Printers
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TC9279P TC9279F |
Summ-Delta Modulation system DA converter with built-in 8 times over sampling digital filter
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
Toshiba Corporation
|
| TC55V8512FTI-15 TC55V8512JI-15 TC55V8512FTI-12 TC5 |
524,288-WORD BY 16-BIT CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| TC55V16256FTI TC55V16256FTI-12 TC55V16256FTI-15 TC |
262, 144-WORD BY 16-BIT CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC74VHCT244AF TC74VHCT244AFK TC74VHCT244AFT-EL |
CMOS Digital Integrated Circuit Silicon Monolithic
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| KS0066F00 |
CMOS Digital Integrated Circuit
|
Samsung Electronics
|
| TC58FV321 TC58FVB321FT TC58FVB321FT-10 TC58FVB321F |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
32-MBIT (4M 】 8 BITS / 2M 】 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC7LX1102FK |
CMOS Digital Integrated Circuits Silicon Monolithic
|
Toshiba Semiconductor
|
| TC74AC10F TC74AC10FN TC74AC10P |
CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
